description the gc4400 series are high voltage, high power (cath- ode base) pin diodes. these high resistivity silicon de- vices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of de- vice hours in high reliability systems. each device can withstand storage temperatures from -65 to +200c and will operate over the range from -55 to +150c. all devices meet or exceed military environ- mental specifications of mil-s-19500. the gc4400 series will operate typically with +50 ma forward bias. breakdown voltages are available up to 1000 volts. model number breakdown voltage (i r =10 m a max) v b (min)(volts) junction capacitance 1 c j -50 (max) (pf) series resistance 2 (100ma, 100 mhz) r s100 (max) (ohms) carrier lifetime (i r = 6ma, i f = 10ma) t l (typ) (sec) thermal resistance (max) (c/w) gc4410 100 0.10 0.6 .2 40 gc4411 100 0.25 0.5 .5 25 gc4412 100 0.50 0.4 .7 20 gc4413 3 100 0.75 0.3 1.0 10 GC4430 300 0.10 1.5 .5 40 gc4431 300 0.25 1.2 1.0 30 gc4432 300 0.50 1.0 1.5 20 gc4433 3 300 0.75 0.8 2.0 10 gc4490 1000 0.10 1.5 1.0 30 gc4491 1000 0.25 1.2 2.0 25 gc4492 1000 0.50 1.0 3.0 20 gc4493 3 1000 0.75 0.8 5.0 10 gc4494 1000 1.3 .35 6.0 7 gc4495 1000 2.5 .3 7.5 5 applications the gc4400 series can be used in rf circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from uhf through ku band. switch applications include high speed switches (ecm systems), tr or lobing switches, channel or antenna se- lection switches (telecommunications), duplexers (ra- dar) and digital phase shifters (phased arrays). the gc4400 series can be used in rf circuits as an on/off at moderate rf power levels. attenuator type applications include amplitude modulators, agc attenuators, power levelers and level set attenuators. high voltage pin diodes ratings maximum leakage current: 0.5 m a a t 80% of minimum rated breakdown operating temperature: -55 c t o +150c storage temperature: -65 c t o +200c the tabulated specifications above are for case style 30. diodes are also available in various chip configurations. each type offers trade offs in series resistance, junction capacitance, carrier lifetime and breakdown voltage; the proper choice of which depends on the end application. reverse polarity diodes (nip) and faster speed pin and nip diodes are also available. (see data sheets for gc4500, gc4200, and gc4300 series respectively.) notes: 1. capacitance is measured at 1 mhz and -50 volts. 2. resistance is measured using transmission loss techniques. 3. these devices are not available in all case styles. please consult the factory. specific package styles offered. electrical specifications: t a = 25c semiconductor operation 75 technology drive ? lowell, ma 01851 ? tel: 978-442-5600 ? fax: 978-937-3748 75 control devices
high voltage pin diodes typical performance curves semiconductor operation 75 technology drive ? lowell, ma 01851 ? tel: 978-442-5600 ? fax: 978-937-3748 76 control devices
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